IEC 63068-3:2020 半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第3部分:用光致发光法检测缺陷的试验方法

标准编号：IEC 63068-3:2020

中文名称：半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第3部分:用光致发光法检测缺陷的试验方法

英文名称：Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

发布日期：2020-07-13

标准范围

IEC 63068-3:2020提供了使用光致发光检测商用4H-SiC（碳化硅）外延晶片中生长缺陷的定义和指南。此外，本文件举例说明了光致发光图像和发射光谱，以便能够检测和分类SiC同质外延晶片中的缺陷。

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

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