IEC 63068-1:2019 半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第1部分:缺陷分类

标准编号：IEC 63068-1:2019

中文名称：半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第1部分:缺陷分类

英文名称：Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

发布日期：2019-01-30

标准范围

IEC？63068-1:2019（E）给出了生长态4H-SiC（碳化硅）外延层中缺陷的分类。缺陷根据其晶体结构进行分类，并通过包括亮场OM（光学显微镜）、PL（光致发光）和XRT（X射线形貌）图像在内的无损检测方法进行识别。

IEC？63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

标准预览图