IEC TS 62607-6-7:2023 纳米制造.关键控制特性.第6-7部分:石墨烯.薄层电阻:范德波法

标准编号：IEC TS 62607-6-7:2023

中文名称：纳米制造.关键控制特性.第6-7部分:石墨烯.薄层电阻:范德波法

英文名称：Nanomanufacturing - Key control characteristics - Part 6-7: Graphene - Sheet resistance: van der Pauw method

发布日期：2023-06-07

标准范围

IEC TS 62607-6-7:20 23建立了一种方法来确定关键控制特性薄层电阻RS[以欧姆每平方(？/sq)测量]，通过范德堡方法，vdP。薄层电阻RS通过对放置在平面样品的边界上的四个电触点进行的四端子电阻的测量来导出，并用涉及两个电阻测量的数学表达式来计算。用本文件中描述的方法对石墨烯样品的RS的测量范围从10？2？/sq到104？/平方。该方法适用于CVD石墨烯，只要它被转移到石英衬底或其他绝缘材料（石英、Si上的SiO2），以及从碳化硅生长的石墨烯。该方法与直列四-点探针法（4PP，IEC 62607-6-8）用于薄层电阻的测量，当可以可靠地将触点放置在样品边界上时，可以应用，避免样品被4PP划伤。如果样品是均匀的，范德堡方法的结果与接触位置无关，这对于现阶段的石墨烯通常不是真的。本文考虑了具有非严格均匀电导率分布的样品的情况，并提出了一种将样品不均匀性视为RS不确定性的一个组成部分的方法。

IEC TS 62607-6-7:2023 establishes a method to determine the key control characteristics sheet resistance RS [measured in ohm per square (？/sq)], by the van der Pauw method, vdP.
The sheet resistance RS is derived by measurements of four-terminal electrical resistance performed on four electrical contacts placed on the boundary of the planar sample and calculated with a mathematical expression involving the two resistance measurements.
The measurement range for RS of the graphene samples with the method described in this document goes from 10？2？/sq to 104？/sq.
The method is applicable for CVD graphene provided it is transferred to quartz substrates or other insulating materials (quartz, SiO2 on Si), as well as graphene grown from silicon carbide.
The method is complementary to the in-line four-point-probe method (4PP, IEC 62607-6-8) for what concerns the measurement of the sheet resistance and can be applied when it is possible to reliably place contacts on the sample boundary, avoiding the sample being scratched by the 4PP.
The outcome of the van der Pauw method is independent of the contact position provided the sample is uniform, which is typically not true for graphene at this stage. This document considers the case of samples with non-strictly uniform conductivity distribution and suggests a way to consider the sample inhomogeneity as a component of the uncertainty on RS.

标准预览图