IEC TS 62607-6-3:2020 纳米制造.关键控制特性.第6-3部分:石墨烯基材料.磁畴尺寸:衬底氧化

标准编号：IEC TS 62607-6-3:2020

中文名称：纳米制造.关键控制特性.第6-3部分:石墨烯基材料.磁畴尺寸:衬底氧化

英文名称：Nanomanufacturing - Key control characteristics - Part 6-3: Graphene-based material - Domain size: substrate oxidation

发布日期：2020-10-27

标准范围

IEC TS 62607:2020建立了确定结构关键控制特性的标准化方法-域大小对于由通过化学气相沉积(CVD)在铜上生长的石墨烯组成的膜-基底氧化。它提供了一种快速、简单和可靠的方法来评估在铜箔或铜膜上形成的石墨烯畴，以了解石墨烯畴尺寸对石墨烯性质的影响，并增强使用CVD石墨烯的高速、柔性和透明器件的性能。-根据本文件确定的畴尺寸将被列为石墨烯IEC 62565-3-1空白详细规范中的关键控制特性。畴密度是等效的度量。-通过该方法得出的畴尺寸定义为供应商指定的观察区域中畴尺寸的平均值，单位为cm2或μ m2。-该方法适用于通过CVD在铜上生长的石墨烯。在转移到最终衬底之前，在铜箔上进行表征。-由于该方法是破坏性的，样品不能重新进入制造过程。

IEC TS 62607:2020 establishes a standardized method to determine the structural key control characteristic
– domain size
for films consisting of graphene grown by chemical vapour deposition (CVD) on copper by
– substrate oxidation.
It provides a fast, facile and reliable method to evaluate graphene domains formed on copper foil or copper film for understanding the effect of the graphene domain size on properties of graphene and enhancing the performance of high speed, flexible, and transparent devices using CVD graphene.
– The domain size determined in accordance with this document will be listed as a key control characteristic in the blank detail specification for graphene IEC 62565-3-1. Domain density is an equivalent measure.
– The domain size as derived by this method is defined as the mean value of size of the domains in the observed area specified by supplier in terms of cm2 or μm2.
– The method is applicable for graphene grown on copper by CVD. The characterization is done on the copper foil before transfer to the final substrate.
– As the method is destructive, the samples cannot be re-launched into the fabrication process.

标准预览图