IEC TS 61934:2024 电绝缘材料和系统.短上升时间和重复电压脉冲下局部放电(PD)的电气测量
标准编号:IEC TS 61934:2024
中文名称:电绝缘材料和系统.短上升时间和重复电压脉冲下局部放电(PD)的电气测量
英文名称:Electrical insulating materials and systems - Electrical measurement of partial discharges (PD) under short rise time and repetitive voltage impulses
发布日期:2024-01-26
标准范围
IEC TS 61934:2024作为IEC TS 61934:2024 RLV提供,其中包含国际标准及其红线版本,显示了与上一版本相比技术内容的所有变化。IEC TS 61934:2024适用于离线电气测量当受到电力电子设备产生的重复电压脉冲的应力时,电气绝缘系统(EIS)中发生的局部放电(PD)。典型的应用是属于由电力电子器件驱动的设备的EISs,诸如马达、感应电抗器、风力涡轮发电机和电力电子器件模块本身。注:将本文件用于特定产品可能需要应用额外程序。本文件范围不包括以下内容:-基于光学或超声PD检测的方法,-当受到非重复脉冲电压(例如雷电脉冲或来自开关设备的开关脉冲)的应力时,PD测量的应用领域。与上一版相比,此版本包括以下重大技术变更:a)在导言中增加了关于电力电子学领域正在取得的进展的背景信息,包括宽带隙半导体器件的引入;b)电压脉冲发生器;电压脉冲波形的参数值已经被修改以反映宽带隙半导体器件的应用。c)PD检测方法;第三版中没有描述基于电荷的测量,也没有描述抑制外部噪声的源控门控技术。d)自2011年上一版以来,该领域取得了重大技术进步,数百份出版物证明了这一点。因此,2011年版的参考书目在第三版中被删除。
IEC TS 61934:2024 is available as IEC TS 61934:2024 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC TS 61934:2024 is applicable to the off-line electrical measurement of partial discharges (PDs) that occur in electrical insulation systems (EISs) when stressed by repetitive voltage impulses generated from power electronics devices.
Typical applications are EISs belonging to apparatus driven by power electronics, such as motors, inductive reactors, wind turbine generators and the power electronics modules themselves.
NOTE Use of this document with specific products can require the application of additional procedures.
Excluded from the scope of this document are:
- methods based on optical or ultrasonic PD detection,
- fields of application for PD measurements when stressed by non-repetitive impulse voltages such as lightning impulse or switching impulses from switchgear.
This edition includes the following significant technical changes with respect to the previous edition:
a) background information on the progress being made in the field of power electronics including the introduction of wide band gap semiconductor devices has been added to the Introduction;
b) voltage impulse generators; the parameter values of the voltage impulse waveform have been modified to reflect application of wide band gap semiconductor devices.
c) PD detection methods; charge-based measurements are not described in this third edition nor are source-controlled gating techniques to suppress external noise.
d) Since the previous edition in 2011, there have been significant technical advances in this field as evidenced by several hundreds of publications. Consequently, the Bibliography in the 2011 edition has been deleted in this third edition.
标准预览图


