IEC 62047-45:2025 半导体器件微机电器件第45部分:硅基MEMS制造技术纳米结构耐冲击性的测量方法

标准编号：IEC 62047-45:2025

中文名称：半导体器件微机电器件第45部分:硅基MEMS制造技术纳米结构耐冲击性的测量方法

英文名称：Semiconductor devices - Micro-electromechanical devices - Part 45: Silicon based MEMS fabrication technology - Measurement method of impact resistance of nanostructures

发布日期：2025-03-20

标准范围

IEC 62047-45:2025规定了测量硅基微机电系统（MEMS）中使用的微加工技术制造的纳米结构的抗冲击性的要求和测试方法。本文件适用于微电子技术工艺和其他微机械加工技术制造的纳米结构的原位抗冲击性测量。在MEMS器件的生产中，由于微/纳米尺寸，制造的非理想效应与宏观尺度相比大大放大。表面缺陷、线宽损失和残余应力可能发生在制造的物体中，导致MEMS器件的机械强度的严重波动。该文件规定了一种基于MEMS技术的纳米结构抗冲击性原位测量方法，以提取实际制造结构的冲击强度。这种测试方法不需要复杂的仪器（如扫描探针显微镜和纳米压头）和特殊的测试样品。由于本文档中的原位片上测试仪可以作为标准检测图案植入器件制造中，因此本文档可以提供一个桥梁，通过该桥梁，制造部分可以为设计部分提供一些定量参考。

IEC 62047-45:2025 specifies the requirements and testing method to measure the impact resistance of nanostructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to the in-situ impact resistance measurement of nanostructures manufactured by microelectronic technology process and other micromachining technology.
In the production of MEMS devices, due to the micro/nano size, the non-ideal effect of fabrication is greatly amplified compared with the macroscale. Surface defects, line width loss, and residual stress can occur in the fabricated object, resulting in severe fluctuations in the mechanical strength of MEMS devices. This document specifies an in-situ measurement method for the impact resistance of nanostructures based on MEMS technology to extract the impact strength of actual manufactured structures. This test method does not need intricated instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since the in-situ on-chip tester in this document can be implanted in device fabrication as a standard detection pattern, this document can provide a bridge, by which the fabrication part can give some quantitative reference for the design part.

标准预览图