IEC 63373:2022 GaN HEMT基功率转换器件动态导通电阻测试方法指南

标准编号：IEC 63373:2022

中文名称：GaN HEMT基功率转换器件动态导通电阻测试方法指南

英文名称：Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

发布日期：2022-02-10

标准范围

IEC 63373:2022一般来说，动态导通电阻测试是GaN功率晶体管中电荷俘获现象的一种度量。IEC 63373:2022提供了GaN横向功率晶体管解决方案动态导通电阻测试指南。测试方法可适用于以下情况:a)GaN增强和耗尽模式分立功率器件；b)GaN集成电源解决方案；c)晶圆和封装级别的上述内容。规定的测试方法可用于GaN功率转换器件的器件表征、生产测试、可靠性评估和应用评估。本文件无意涵盖动态导通电阻的基本机制及其产品规格的符号表示。

IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices;
b) GaN integrated power solutions;
c) the above in wafer and package levels.
The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.

标准预览图