IEC 62047-31:2019 半导体器件微机电器件第31部分:层状MEMS材料界面结合能的四点弯曲试验方法

标准编号：IEC 62047-31:2019

中文名称：半导体器件微机电器件第31部分:层状MEMS材料界面结合能的四点弯曲试验方法

英文名称：Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

发布日期：2019-04-05

标准范围

IEC 62047-31:2019（E）规定了一种基于断裂力学概念的四点弯曲试验方法，用于测量分层微机电系统（MEMS）中最弱界面的界面粘附能。在各种MEMS器件中，存在着许多层状材料界面，其粘附能对MEMS器件的可靠性至关重要。四点弯曲试验利用施加在分层MEMS器件试件上的纯弯曲力矩，通过最弱界面中稳态裂纹的临界弯曲力矩测量界面粘附能。本试验方法适用于在半导体衬底上沉积薄膜层的MEMS器件。薄膜层的总厚度应小于支撑基板（通常为硅晶片）厚度的100倍。

IEC 62047-31:2019 (E) specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).

标准预览图