IEC 63229:2021 半导体器件.碳化硅衬底上氮化镓外延膜缺陷的分类

标准编号：IEC 63229:2021

中文名称：半导体器件.碳化硅衬底上氮化镓外延膜缺陷的分类

英文名称：Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

发布日期：2021-04-07

标准范围

IEC 63229:2021（E）给出了在SiC衬底上生长的GaN外延膜中缺陷的定义和分类指南。这些缺陷主要通过示意图、光学显微镜图像和透射电子显微镜图像进行识别和描述。本文件仅涵盖SiC衬底上生长的GaN外延膜中的缺陷，不包括后续工艺引起的缺陷。

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

标准预览图