IEC TS 62607-6-16:2022 纳米制造.关键控制特性.第6-16部分:二维材料.载流子浓度:场效应晶体管法

标准编号：IEC TS 62607-6-16:2022

中文名称：纳米制造.关键控制特性.第6-16部分:二维材料.载流子浓度:场效应晶体管法

英文名称：Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method

发布日期：2022-11-17

标准范围

IEC TS 62607:2022建立了确定关键控制特性的标准化方法载流子浓度用于半导体二维材料场效应晶体管（FET）法。对于半导体二维材料，载流子浓度使用场效应晶体管(FET)测试通过测量从掺杂工艺时的转移曲线获得的电压偏移来评估。FET测试结构由源极、漏极和栅极三个端子组成，在这些端子上施加电压以诱导晶体管动作。传输曲线是通过测量漏极电流而获得的，同时相对于接地的源极施加变化的栅极电压和恒定的漏极电压。

IEC TS 62607:2022 establishes a standardized method to determine the key control characteristic

• carrier concentration

for semiconducting two-dimensional materials by the

• field effect transistor (FET) method.

For semiconducting two-dimensional materials, the carrier concentration is evaluated using a field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer curve upon doping process. The FET test structure consists of three terminals of source, drain, and gate where voltage is applied to induce the transistor action. Transfer curves are obtained by measuring drain current while applying varied gate voltage and constant drain voltage with respect to the source which is grounded.

标准预览图