IEC 60749-6:2017 半导体器件 - 机械和气候测试方法 - 第6部分:高温储存

标准编号：IEC 60749-6:2017

中文名称：半导体器件 - 机械和气候测试方法 - 第6部分:高温储存

英文名称：Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

发布日期：2017-03-03

标准范围

IEC 60749-6:20 17（E）旨在测试和确定在没有施加电应力的情况下在高温下储存对所有固态电子器件的影响。该测试通常用于确定在存储条件下时间和温度对固态电子器件(包括非易失性存储器器件)的热激活失效方法和失效时间的影响(数据保持失效机制)。该试验被认为是非破坏性的，但最好用于器械鉴定。如果此类器械用于递送，则需要评估这种高度加速应力测试的效果。使用Arrhenius加速度方程对热激活失效机制进行建模，关于试验温度和持续时间选择的指导可在IEC 60749-43.与上一版相比，此版本包括以下重大技术变更:a)附加测试条件；b)试验条件适用性的澄清。

IEC 60749-6:2017(E) is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43.
This edition includes the following significant technical changes with respect to the previous edition:
a) additional test conditions;
b) clarification of the applicability of test conditions.

标准预览图