IEC 61215-2:2021 陆地光伏（PV）模块 - 设计资格和型式认证 - 第2部分:测试程序

标准编号：IEC 61215-2:2021

中文名称：陆地光伏（PV）模块 - 设计资格和型式认证 - 第2部分:测试程序

英文名称：Terrestrial photovoltaic (PV) modules - Design qualification and type approval - Part 2: Test procedures

发布日期：2021-02-24

标准范围

IEC 61215-2:20 21作为IEC 61215-2:20 21 RLV提供，其中包含国际标准及其红线版本，显示了与上一版本相比技术内容的所有变化。IEC 61215-2:20 21规定了适合在露天气候下长期运行的地面光伏组件的设计资格要求。本文件旨在适用于所有地面平板模块材料，例如晶体硅模块类型以及薄膜模块。该测试序列的目的是确定模块的电气特性，并在合理的成本和时间限制内尽可能证明模块能够承受长时间暴露在室外。本第二版IEC 61215-2取消并取代第一版IEC 61215-2于2016年发行。与上一版相比，此版本包括以下重大技术变更:a.增加循环（动态）机械载荷测试（MQT 20）。b.增加检测电位诱导降解的试验（MQT 21）。c.增加了双面光伏组件所需的测试方法。d.增加了柔性模块所需的测试方法。这包括增加弯曲测试（MQT 22）。e.修订模拟器要求，以确保不确定性得到明确定义并最小化。f.对热点耐久性测试的修正，其中单片集成（MLI）薄膜技术程序（MQT 09.2）先前包括两个部分，描述了仅适用于硅模块的程序。g.在旁路二极管热测试（MQT 18）中，选择三个而不是所有二极管进行测试。h.从IEC 61215系列中删除标称模块操作测试（NMOT）和相关的NMOT性能测试。

IEC 61215-2:2021 is available as IEC 61215-2:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.

IEC 61215-2:2021 lays down requirements for the design qualification of terrestrial photovoltaic modules suitable for long-term operation in open-air climates. This document is intended to apply to all terrestrial flat plate module materials such as crystalline silicon module types as well as thin-film modules. The objective of this test sequence is to determine the electrical characteristics of the module and to show, as far as possible within reasonable constraints of cost and time, that the module is capable of withstanding prolonged exposure outdoors. This second edition of IEC 61215-2 cancels and replaces the first edition of IEC 61215-2 issued in 2016. This edition includes the following significant technical changes with respect to the previous edition:
a. Addition of cyclic (dynamic) mechanical load testing (MQT 20).
b. Addition of a test for detection of potential-induced degradation (MQT 21).
c. Addition of test methods required for bifacial PV modules.
d. Addition of test methods required for flexible modules. This includes the addition of the bending test (MQT 22).
e. Revision of simulator requirements to ensure uncertainty is both well-defined and minimized.
f. Correction to the hot spot endurance test, where the procedure for monolithically integrated (MLI) thin film technologies (MQT 09.2) previously included two sections describing a procedure only appropriate for silicon modules.
g. Selection of three diodes, rather than all, for testing in the bypass diode thermal test (MQT 18).
h. Removal of the nominal module operating test (NMOT), and associated test of performance at NMOT, from the IEC 61215 series.

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