IEC 60747-9:2019 半导体器件第9部分:分立器件绝缘栅双极晶体管
标准编号：IEC 60747-9:2019
中文名称：半导体器件第9部分:分立器件绝缘栅双极晶体管
英文名称：Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
发布日期：2019-11-13
标准范围
IEC 60747-9:20 19规定了绝缘栅双极晶体管（IGBT）的术语、字母符号、基本额定值和特性、额定值验证和测量方法的产品特定标准。与上一版相比，第三版包含以下重大技术变更:增加了反向阻断型IGBT及其相关技术内容；增加了反导IGBT及其相关技术内容；前一版的某些部分已被修改、合并或删除。
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
- reverse-blocking IGBT and its related technical contents have been added;
- reverse-conducting IGBT and its related technical contents have been added;
- some parts of the previous edition have been amended, combined or deleted.
标准预览图
