IEC 60749-26:2018 半导体器件 - 机械和气候试验方法 - 第26部分:静电放电（ESD）灵敏度测试 - 人体模型（HBM）

标准编号：IEC 60749-26:2018

中文名称：半导体器件 - 机械和气候试验方法 - 第26部分:静电放电（ESD）灵敏度测试 - 人体模型（HBM）

英文名称：Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)

发布日期：2018-01-15

标准范围

IEC？60749-26:2018根据组件和微电路暴露于规定的人体模型（HBM）静电放电（ESD）对损坏或降解的敏感性（敏感性）建立了测试、评估和分类的程序。本文件的目的是建立一种测试方法，该方法将复制HBM故障，并在测试仪之间提供可靠、可重复的HBM ESD测试结果，而不考虑组件类型。可重复的数据将允许对HBM ESD灵敏度水平进行准确的分类和比较。半导体器件的ESD测试选自本测试方法、机器型号（MM）测试方法（见IEC？60749-27）或IEC？中的其他ESD测试方法。60749系列。除非另有说明，否则本试验方法为所选方法。这第四版取消并取代了2013年出版的第三版。本版构成技术修订版。本标准基于ANSI/ESDA/JEDEC JS-001-2014。它是在版权所有者、ESD协会和JEDEC固态技术协会的许可下使用的。与上一版相比，此版本包括以下重大技术变更:A）？增加了与使用低寄生模拟器进行HBM应力相关的新子条款，以及确定HBM模拟器是否为低寄生模拟器的测试；b）？为克隆的非供应引脚增加了一个新的子条款，并为测试克隆的非供应引脚增加了一个新的附件。

IEC？60749-26:2018 establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD).
The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels.
ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC？60749-27) or other ESD test methods in the IEC？60749 series. Unless otherwise specified, this test method is the one selected.
This fourth edition cancels and replaces the third edition published in 2013. This edition constitutes a technical revision. This standard is based upon ANSI/ESDA/JEDEC JS-001-2014. It is used with permission of the copyright holders, ESD Association and JEDEC Solid state Technology Association.
This edition includes the following significant technical changes with respect to the previous edition:
a)？a new subclause relating to HBM stressing with a low parasitic simulator is added, together with a test to determine if an HBM simulator is a low parasitic simulator;
b)？a new subclause is added for cloned non-supply pins and a new annex is added for testing cloned non-supply pins.

标准预览图