IEC TS 62607-5-3:2020 纳米制造关键控制特性第5-3部分:薄膜有机/纳米电子器件电荷载流子浓度的测量

标准编号：IEC TS 62607-5-3:2020

中文名称：纳米制造关键控制特性第5-3部分:薄膜有机/纳米电子器件电荷载流子浓度的测量

英文名称：Nanomanufacturing - Key control characteristics - Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge carrier concentration

发布日期：2020-04-14

标准范围

IEC TS 62607-5-3:2020规定了用于评估有机/纳米材料中大范围电荷载流子浓度的样品结构。本规范适用于金属/绝缘体/半导体堆叠结构中的电容电压（C-V）测量和范德堡配置的霍尔效应测量。本文还给出了选择有机半导体层中电荷载流子浓度测量方法的标准。

IEC TS 62607-5-3:2020 specifies sample structures for evaluating a wide range of charge carrier concentration in organic/nano materials. This specification is provided for both capacitance-voltage (C-V) measurements in metal/insulator/semiconductor stacking structures and Hall-effect measurements with the van der Pauw configuration. Criteria for choosing measurement methods of charge carrier concentration in organic semiconductor layers are also given in this document.

标准预览图