ISO 8181:2023 原子层沉积 词汇

标准编号：ISO 8181:2023

中文名称：原子层沉积 词汇

英文名称：Atomic layer deposition — Vocabulary

发布日期：2023-10

标准范围

本文件定义了原子层沉积（ALD）的一般术语和薄膜生长过程。根据前体在衬底上的连续表面反应之间的分离，ALD技术分为常规时间分离ALD和空间ALD。除了平面基材外，ALD还可用于微纳米颗粒上的涂层，这是作为粉末ALD开发的。还包括一些能量增强ALD技术。本文档规定了不同ALD方法的流程。本文件适用于ALD过程。本文件不适用于沉积的材料或特定的纳米结构。本文件适用于与ALD相关的工业生产、科学研究、教学、出版和科技传播。

This document defines general terms and film growth processes for atomic layer deposition (ALD). ALD technique is classified into conventional time separated ALD and spatial ALD according to the separation between sequential surface reactions of precursors on substrate. Besides planar substrate, ALD can be used for coating on micro-nano particles, which is developed as powder ALD. Some energy enhanced ALD techniques are also included. This document specifies the processes of different ALD methods.

This document applies to the process of ALD. This document does not apply to the deposited materials or specific nanostructures.

This document applies to industrial production, scientific research, teaching, publishing and scientific and technological communications related to ALD.

标准预览图