ISO 5618-2:2024 精细陶瓷（先进陶瓷、高技术陶瓷） GaN晶体表面缺陷的试验方法 第2部分：蚀刻坑密度的测定方法
标准编号：ISO 5618-2:2024
中文名称：精细陶瓷（先进陶瓷、高技术陶瓷） GaN晶体表面缺陷的试验方法 第2部分：蚀刻坑密度的测定方法
英文名称：Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 2: Method for determining etch pit density
发布日期：2024-04
标准范围
该文献描述了一种用于确定蚀刻坑密度的方法，该方法用于检测在单晶GaN衬底或单晶GaN膜上出现的位错和加工引入的缺陷。它适用于ISO 5618-1中规定的缺陷？从暴露在以下类型的GaN衬底或膜的表面上的缺陷中:单晶GaN衬底；通过在单晶GaN衬底上同质外延生长形成的单晶GaN膜；或通过异质外延生长在单晶Al2O3、SiC或Si衬底上形成的单晶GaN膜。适用于刻蚀坑密度≤7 × 107的缺陷？厘米-2。
This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films.
It is applicable to the defects specified in ISO 5618-1 from among the defects exposed on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate.
It is applicable to defects with an etch pit density of ≤ 7 × 107 cm-2.
标准预览图
