ISO 5618-1:2023 精细陶瓷（先进陶瓷、高技术陶瓷） GaN晶体表面缺陷的试验方法 第1部分：缺陷分类

标准编号：ISO 5618-1:2023

中文名称：精细陶瓷（先进陶瓷、高技术陶瓷） GaN晶体表面缺陷的试验方法 第1部分：缺陷分类

英文名称：Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 1: Classification of defects

发布日期：2023-11

标准范围

该文献给出了在单晶氮化镓(GaN)衬底或单晶GaN膜上出现的各种表面缺陷中的位错和工艺引起的缺陷的分类。适用于以下类型GaN衬底或薄膜表面暴露的位错和工艺诱发缺陷:—？单晶GaN衬底；—？通过在单晶GaN衬底上同质外延生长形成的单晶GaN膜；—？通过在单晶氧化铝（Al2O3）、碳化硅（SiC）或硅（Si）衬底上异质外延生长形成的单晶GaN膜。如果表面法线与GaN c轴的锐角绝对值为？≥？8°.

This document gives a classification of the dislocations and process-induced defects, from among the various surface defects, that occur on single-crystal gallium nitride (GaN) substrates or single-crystal GaN films.

It is applicable to the dislocations and process-induced defects exposed on the surface of the following types of GaN substrates or films:

—     single-crystal GaN substrate;

—     single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate;

—     single-crystal GaN film formed by heteroepitaxial growth on a single-crystal aluminium oxide (Al₂O₃), silicon carbide (SiC) or silicon (Si) substrate.

It is not applicable to defects exposed on the surface if the absolute value of the acute angle between the surface normal and the c-axis of GaN is ≥ 8°.

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