ISO/TR 22335:2007 表面化学分析 深度分析 溅射率的测量：使用机械针轮廓仪的网孔复制法
标准编号：ISO/TR 22335:2007
中文名称：表面化学分析 深度分析 溅射率的测量：使用机械针轮廓仪的网孔复制法
英文名称：Surface chemical analysis — Depth profiling — Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer
发布日期：2007-07
标准范围
ISO/TR 22335:2007描述了一种用俄歇电子能谱（AES）和X？射线光电子能谱（XPS），其中样品在面积在0.4 mm2和3.0 mm2之间的区域上离子溅射。该技术报告仅适用于横向均匀的块体或单层材料，其中离子溅射速率由溅射深度（如通过机械触针轮廓仪测量的）和溅射时间确定。该技术报告提供了一种通过假设恒定溅射速度将离子溅射时间标度转换为深度分布中的溅射深度的方法。该方法尚未针对扫描探针显微镜系统设计或使用扫描探针显微镜系统进行测试。它不适用于溅射面积小于0.4 mm2或溅射引起的表面粗糙度与待测量的溅射深度相比显著的情况。
ISO/TR 22335:2007 describes a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X？ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm2 and 3,0 mm2. The Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion-sputtering rate is determined from the sputtered depth, as measured by a mechanical stylus profilometer, and sputtering time.The Technical Report provides a method to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity. This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm2 or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured.
标准预览图
