ISO/TTA 4:2002 硅感光底层薄型胶卷热传导测定

标准编号：ISO/TTA 4:2002

中文名称：硅感光底层薄型胶卷热传导测定

英文名称：Measurement of thermal conductivity of thin films on silicon substrates

发布日期：2002-11

标准范围

TTA 4:2002提出了三ω法的标准程序，用于在导热系数明显大于薄膜导热系数的基板上测量薄电绝缘薄膜的导热系数。该方法适用于具有以下特征的硅衬底上的薄膜:a） 该膜是电绝缘的；b） 薄膜的热导率小于硅热导率的十分之一；c） 薄膜厚度均匀，厚度在0.25到1微米之间。d） 薄膜的最大尺寸受制备和测量装置的尺寸限制；e） 薄膜的最小尺寸受可放置在薄膜表面的电路元件的最小尺寸限制。注:尺寸约为15 mm×25 mm的试样是合适的，尽管小到10 mm×10 mm的试样也是可用的。该方法直接适用于硅片衬底上的二氧化硅薄膜。该方法可适用于其他高导热性基板上的绝缘膜，前提是基板材料的参数替代了该方法中使用的硅参数和相关的计算机程序。该方法适用于室温附近的测量。

TTA 4:2002 proposes a standard procedure for the three-omega method for measuring the thermal conductivity of a thin, electrically insulating film, on a substrate having a thermal conductivity significantly greater than the thermal conductivity of the film.This method is applicable to a film on a silicon substrate with the following characteristics:a) the film is electrically insulating;b) the film has a thermal conductivity that is less than one tenth the thermal conductivity of silicon;c) the film is uniform in thickness and the thickness lies in the range 0,25 to 1 micrometres.d) the maximum dimensions of the film are limited by the sizes of the preparation and measurement apparatus;e) the minimum dimensions of the film are limited by the minimum size of the circuit element that can be placed on the film surface.NOTE A specimen approximately 15 mm by 25 mm is of an appropriate size although specimens as small as 10 mm by 10 mm are usable.The method is directly applicable to films of silicon dioxide on silicon wafer substrates.The method may be applicable to insulating films on other high-thermal conductivity substrates provided that the parameters of the substrate material are substituted for the parameters of silicon used in this method and the associated computer program.The method is applicable to measurements near room temperature.

标准预览图