ISO 17109:2022 表面化学分析 深度剖析 在x射线光电子能谱、俄歇电子能谱学和二次离子质谱使用单层和多层薄膜溅射深度剖析溅射速率测定方法

标准编号：ISO 17109:2022

中文名称：表面化学分析 深度剖析 在x射线光电子能谱、俄歇电子能谱学和二次离子质谱使用单层和多层薄膜溅射深度剖析溅射速率测定方法

英文名称：Surface chemical analysis — Depth profiling — Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth p

发布日期：2022-03

标准范围

本文件规定了一种校准材料溅射深度的方法，该方法通过使用单层或多层参考样品，在设定的溅射条件下测量材料的溅射速率，样品层与需要深度校准的材料层相同。当使用AES、XPS和SIMS对溅射深度进行分析时，对于厚度为20-200纳米的层，该方法的典型准确度在5%-10%之间。溅射速率由参考样品中相关界面之间的层厚度和溅射时间确定，并与溅射时间一起使用，以给出待测样品的厚度。确定的离子溅射速率可用于预测各种其他材料的离子溅射速率，以便通过溅射产额和原子密度的列表值来估计这些材料中的深度标度和溅射时间。

This document specifies a method for the calibration of the sputtered depth of a material from a measurement of its sputtering rate under set sputtering conditions using a single- or multi-layer reference sample with layers of the same material as that requiring depth calibration. The method has a typical accuracy in the range of 5 % to 10 % for layers 20 nm to 200 nm thick when sputter depth profiled using AES, XPS and SIMS. The sputtering rate is determined from the layer thickness and the sputtering time between relevant interfaces in the reference sample and this is used with the sputtering time to give the thickness of the sample to be measured. The determined ion sputtering rate can be used for the prediction of ion sputtering rates for a wide range of other materials so that depth scales and sputtering times in those materials can be estimated through tabulated values of sputtering yields and atomic densities.

标准预览图