ISO/TS 10867:2010 纳米技术 近红外光致发光谱法表征单壁碳纳米管

标准编号：ISO/TS 10867:2010

中文名称：纳米技术 近红外光致发光谱法表征单壁碳纳米管

英文名称：Nanotechnologies — Characterization of single-wall carbon nanotubes using near infrared photoluminescence spectroscopy

发布日期：2010-09

标准范围

ISO/TS 10867:2010提供了使用近红外（NIR）光致发光（PL）光谱对单壁碳纳米管（SWCNT）进行表征的指南。ISO/TS 10867:2010提供了一种测量方法，用于测定样品中半导体SWCNT的手性指数及其相对积分PL强度。该方法可以扩展到根据测量的集成光致发光强度和光致发光截面知识估算样品中半导体单壁碳纳米管的相对质量浓度。

ISO/TS 10867:2010 provides guidelines for the characterization of single-wall carbon nanotubes (SWCNTs) using near infrared (NIR) photoluminescence (PL) spectroscopy.ISO/TS 10867:2010 provides a measurement method for the determination of the chiral indices of the semi-conducting SWCNT in a sample and their relative integrated PL intensities.The method can be expanded to estimate relative mass concentrations of semi-conducting SWCNTs in a sample from measured integrated PL intensities and knowledge of their PL cross-sections.

标准预览图